- 您现在的位置：买卖IC网 > Sheet目录462 > IXTH60N15 (IXYS)MOSFET N-CH 150V 60A TO-247
IXTH 60N15
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
g fs
V DS = 10 V; I D = 0.5 I D25 , pulse test
28
38
S
C iss
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
3000
720
pF
pF
1
2
3
C rss
t d(on)
220
20
pF
ns
t r
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 I D25
20
ns
t d(off)
R G = 3.6 ? (External)
85
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
t f
18
ns
Dim.
Millimeter
Inches
Q G(on)
110
nC
Min. Max.
A 4.7 5.3
Min. Max.
.185 .209
A 1
A 2
Q GS
Q GD
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 I D25
20
55
nC
nC
2.2 2.54
2.2 2.6
b 1.0 1.4
.087 .102
.059 .098
.040 .055
R thJC
0.45
K/W
b 1
b 2
1.65 2.13
2.87 3.12
.065 .084
.113 .123
R thCK
0.25
K/W
C .4 .8
D 20.80 21.46
.016 .031
.819 .845
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
.610 .640
0.205 0.225
.780 .800
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
I S
I SM
V SD
t rr
Q rr
V GS = 0 V
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 25 A, -di/dt = 100 A/ μ s, V R = 100 V
150
2.5
60
240
1.5
A
A
V
ns
μ C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXTH60N25
MOSFET N-CH 250V 60A TO-247
IXTH6N100D2
MOSFET N-CH 1000V 6A TO247
IXTH6N120
MOSFET N-CH 1200V 6A TO-247AD
IXTH6N150
MOSFET N-CH 1500V 6A TO-247
IXTH6N80A
MOSFET N-CH 800V 6A TO-247
IXTH6N90A
MOSFET N-CH 900V 6A TO-247
IXTH72N20
MOSFET N-CH 200V 72A TO-247
IXTH75N15
MOSFET N-CH 150V 75A TO-247
相关代理商/技术参数
IXTH60N20L2
功能描述:MOSFET LINEAR L2 SERIES MOSFET 200V 60A
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH60N25
功能描述:MOSFET 60 Amps 250V 0.046 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH60N30T
功能描述:MOSFET 60 Amps 300V 60 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH62N25T
功能描述:MOSFET 62 Amps 250V 50 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH67N08
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 67A I(D) | TO-218VAR
IXTH67N08MA
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 67A I(D) | TO-247(5)
IXTH67N08MB
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 67A I(D) | TO-247(5)
IXTH67N10
功能描述:MOSFET 67 Amps 100V 0.025 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube